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本文介绍了一种能控制二氧化硅图形剖面坡度的刻蚀新技术。涂胶前,在热生长二氧化硅上涂敷一层二氧化硅乳胶源,乳胶源的烘干温度决定二氧化硅图形的剖面角度。该技术对提高半导体器件的可靠性及制备某些特殊器件具有重要意义。与常规工艺相比,它具有操作简单、生产成本低,实用性强等优点。本文还类比于几何光学中光线传播的规律,提出腐蚀液传播的模型,依据该模型,推导出二氧化硅腐蚀剖面所满足的方程。
This article describes a new etching technique that controls the slope of a silicon dioxide profile. Before coating, a layer of silica latex source is coated on the hot growth silica. The drying temperature of the latex source determines the cross-sectional angle of the silica pattern. This technique is of great importance for improving the reliability of semiconductor devices and for preparing some special devices. Compared with the conventional process, it has the advantages of simple operation, low production cost and strong practicability. This paper also compares the law of light propagation in geometrical optics and proposes a model of corrosive fluid propagation. According to the model, the equation of corrosion profile of silica is derived.