一、引言 核辐射对半导体材料产生损伤,引起器件性能退化。为提高器件在核辐射环境中的生存能力,科技工作者采取了种种措施,其中减薄基区是减小双极器件增益退化的主要手段。常规器件在高压工作下基区穿通效应限制了基区最小宽度,加之过厚的外延层增加了饱和压降 First, the introduction of nuclear radiation damage to the semiconductor material, causing degradation of device performance. In order to improve the survivability of the device in the environment of nuclear radiation, scientists and technicians have taken various measures, of which thinning of the base region is the main means of reducing the gain degradation of the bipolar device. Conventional devices under high voltage work under the base of the punch-through effect limits the minimum width of the base area, combined with the excessive thickness of the epitaxial layer increases the saturation voltage drop