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Ge纳米晶嵌入高k介质中既可以提高器件的可靠性又可以降低写入电压和提高存储速度。本实验主要研究了用于非挥发存储器的含有Ge纳米晶MIS结构的电荷存储特性。MIS结构由电子束蒸发的方法制备,包括Al2O3控制栅,Al2O3中Ge纳米晶和Al2O3隧道氧化层。这种MIS结构在1MHz下的C-V特性表现出良好的电学性能,平带电压漂移为0.96V,电荷存储密度达到4.17×1012cm-2。不同频率下Ge纳米晶在Al2O3介质中电荷存储特性随着频率的增加,平带电压的漂移和存储的电荷数减小。随着扫描速率的增加,平带电压的漂移和存储电荷也减小。
Ge nanocrystal embedded in high-k medium can improve the reliability of the device can also reduce the write voltage and increase storage speed. This experiment mainly studies the charge storage characteristics of Ge nanocrystalline MIS structures for non-volatile memory. The MIS structure is prepared by a method of electron beam evaporation, including an Al 2 O 3 control gate, a Ge nanocrystal and an Al 2 O 3 tunnel oxide layer in Al 2 O 3. This MIS structure shows good C-V characteristics at 1 MHz with a flat band voltage drift of 0.96 V and a charge storage density of 4.17 × 10 12 cm -2. The charge storage characteristics of Ge nanocrystals in Al2O3 media at different frequencies with the increase of the frequency decrease the flat band voltage drift and the stored charge number. As the scan rate increases, the flatband voltage drift and stored charge also decrease.