少数载流子寿命τ是一项重要的材料参数,有利于鉴别电子—空穴复合性质。本文报导1.3μm波长的四元有源层τ的测量。该层是由液相外延生长的,其n型和P型的掺杂浓度均在10~(17)～10~(19)cm~(-3)范围。所有测量是在无p-n结的双异质结内进行。采用氩离子倾腔和锁模激光器在低激励的条件下测量衰减时间。对半绝缘Fe掺杂的衬底上单独外延生长的样品,测最它的霍尔系数来确定载流子浓度。在300K时,寿命与载流子密度的依赖关系是τ≈26(10_(18)/p)~(1.2)ns和τ≈ The minority carrier lifetime τ is an important material parameter that facilitates the identification of electron-hole recombination properties. This paper reports the measurement of the quaternary active layer τ of 1.3 μm. The layer is grown by liquid phase epitaxy. The doping concentration of n-type and p-type is in the range of 10 ~ (17) ~ 10 ~ (19) cm ~ (-3). All measurements were made in a double heterojunction without a p-n junction. The decay time was measured under low excitation conditions using argon ion-pumped and mode-locked lasers. For semi-insulating Fe-doped substrate epitaxial growth of the sample alone, measured its Hall coefficient to determine the carrier concentration. At 300K, the dependence of lifetime on carrier density is τ≈26 (10_ (18) / p) ~ (1.2) ns and τ≈