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降低CCD的转移驱动电压摆幅对于减小器件的功耗有着积极的作用。通过对CCD电荷转移过程的原理进行分析,建立了CCD转移驱动电压摆幅的仿真模型,并从势垒注入、多晶硅电极间隙、栅介质层厚度等方面进行了仿真分析,找出了影响CCD转移驱动电压摆幅的关键因素,同时利用该模型得到了降低CCD转移驱动电压摆幅的优化条件。最后采用仿真结果进行了流片验证,CCD的驱动电压摆幅由原来的7V降低到了4V,验证了仿真结果的有效性。
Reduce CCD transfer drive voltage swing to reduce the power consumption of the device has a positive effect. By analyzing the principle of CCD charge transfer process, a simulation model of CCD transfer voltage swing was established, and the simulation analysis was carried out from the aspects of barrier injection, polysilicon electrode gap and gate dielectric thickness, and the influence of CCD transfer The key factors to drive the voltage swing are given. At the same time, the optimal conditions for reducing the CCD transfer driving voltage swing are obtained. Finally, the simulation results were used to verify the results. The driving voltage swing of CCD was reduced from 7V to 4V, which verified the validity of the simulation results.