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采用双载流子模型的二维(2D)数字计算模拟了GaAsMESFET的雪崩击穿。模拟中包括了由碰撞电离而产生的电子-空穴对,而且还采用了GaAs表面耗尽层的简单模型。本文论证了栅偏置与击穿电压的关系,说明了表面耗尽层、漏到栅间距和漏接触下n~+层对击穿电压的影响,现已弄清表面耗尽层对栅偏置与击穿电压关系有明显的影响。根据半绝缘衬底的电导率调制解释了击穿机理。
A two-dimensional (2D) numerical calculation using a dual-carrier model simulates the avalanche breakdown of GaAsMESFETs. The simulation included electron-hole pairs generated by impact ionization, and a simple model of the depletion layer of GaAs surface was used. This paper demonstrates the relationship between the gate bias and the breakdown voltage, shows the surface depletion layer, drain to the gate spacing and leakage contact n ~ + layer on the breakdown voltage, it is clear that the surface depletion layer on the gate bias Set and breakdown voltage have a significant impact. The breakdown mechanism explains the conductivity modulation of a semi-insulating substrate.