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采用气态源分子束外延法成功地生长了ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金材料，所使用的气体分别是乙硅烷和锗烷。高能电子衍射被用于原位监控生长层的表面重构状态。在一定的生长温度下，ＧｅｘＳｉ１－ｘ合金组分ｘ取决于锗烷和乙硅烷的流量比。外延层的表面形貌与锗组分的大小、生长层的厚度及生长温度有关。结果表明，较大的锗组分和较高的生长温度利于由二维模式向三维模式转变的外延生长。
GexSi1-x / Si heterostructured gold materials were successfully grown by gaseous source molecular beam epitaxy using disilane and germane as gases respectively. High-energy electron diffraction is used to monitor the surface reconstitution state of the growth layer in situ. At a certain growth temperature, the GexSi1-x alloy composition x depends on the flow ratio of germane to disilane. The surface morphology of the epitaxial layer is related to the size of the germanium component, the thickness of the growth layer and the growth temperature. The results show that the larger germanium component and the higher growth temperature facilitate the epitaxial growth from 2D mode to 3D mode.