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The present paper reports the results of a study in the diffusion length of holes in α-Si:H bysurface photovoltage using a metal(Ni)Schottky barrier.The change of field-assisted hole trans-port with bias light was observed.It is believed that measurement of the diffusion length by thismethod may become a useful way of evaluating and improving the quality of α-Si:H.
The present paper reports the results of a study in the diffusion length of holes in α-Si: H bysurface photovoltage using a metal (Ni) Schottky barrier. Change of field-assisted hole trans-port with bias light was observed. It is believed that measurement of the diffusion length by thismethod may become a useful way of evaluating and improving the quality of α-Si: H.