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采用准分子脉冲激光沉积法 (PLD)分别在Pt/Ti/SiO2 /Si和SiO2 /Si衬底上制备了ZrO2 薄膜 ,采用扩展电阻法 (SRP)研究了薄膜纵向电阻分布 ;采用X射线衍射法 (XRD)研究了衬底温度对ZrO2 薄膜结晶性能的影响 ;精确测试了薄膜的表面粗糙度 ;讨论了薄膜结晶性能与其电学I V特性之间的关系。
ZrO2 thin films were prepared on Pt / Ti / SiO2 / Si and SiO2 / Si substrates respectively by using an excimer pulsed laser deposition (PLD) method. The longitudinal resistance distribution of the films was investigated by extended resistance method (SRP) (XRD) was used to investigate the effect of substrate temperature on the crystallization behavior of ZrO2 thin films. The surface roughness of the films was measured accurately. The relationship between the crystalline properties and the IV characteristics was also discussed.