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对锗和锗化硅材料应用及发展前景进行了简单介绍。主要论述了在14 nm技术节点以下应用于pMOS晶体管沟道材料的锗的化学机械抛光(CMP)技术的发展现状,如抛光液组分的优化以及工艺参数的革新,经过CMP后,Ge的表面粗糙度可以有效降低到0.175 nm(10μm×10μm)。此外对在最新技术节点应用于CMOS以及缓冲层的SiGe材料的CMP技术发展现状进行了总结分析,通过浅沟道隔离技术以及使用优化后的抛光液对Si_(0.5)Ge_(0.5)沟道材料进行化学机械抛光处理后的表面粗糙度为0.09 nm(1μm×1μm)。最后,对目前国内外Ge和SiGe的CMP技术发展现状进行了总结,指出当前CMP技术存在的问题并对其未来发展方向进行了展望。
The application and development of germanium and silicon germanium materials are briefly introduced. The development of chemical mechanical polishing (CMP) technology for germanium used in pMOS transistor channel materials below the 14 nm technology node is discussed. For example, the optimization of the polishing liquid composition and the innovation of the process parameters, after CMP, the surface of Ge Roughness can be effectively reduced to 0.175 nm (10 μm × 10 μm). In addition, the status quo of the development of CMP technology for SiGe materials used in CMOS and buffer layer at the latest technology node is summarized. The effects of the shallow trench isolation technology and the optimized polishing solution on the Si 0.5 Ge 0.5 channel material The surface roughness after the chemical mechanical polishing was 0.09 nm (1 μm × 1 μm). Finally, the current status of the development of CMP technology for Ge and SiGe at home and abroad is summarized. The existing problems of CMP technology are pointed out and the future development of CMP technology is prospected.