论文部分内容阅读
采用磁过滤阴极脉冲真空弧沉积(pulsed filtered cathodic vacuum arc deposition,PFCVAD)系统,以Si(100)单晶片为衬底,在衬底温度300℃、氧气压力4.0×10-2Pa的条件下制备出了c轴择优取向的ZnO薄膜。通过原子力显微镜(AFM)和X射线衍射(XRD)技术对ZnO薄膜的表征,研究了靶负压对ZnO薄膜结构和应变的影响。研究结果表明,不同靶负压条件下ZnO薄膜的晶粒大小分布在16.7~39.0 nm之间,靶负压对薄膜表面结构影响较小;不同靶负压条件下ZnO薄膜都呈张应力,且张应力随靶负压的增大而增大。
A PFCVAD system was fabricated by using a magnetic filtered cathode pulse arc deposition (PFCVAD) system with a Si (100) single crystal substrate at a substrate temperature of 300 ° C and an oxygen pressure of 4.0 × 10 -2 Pa The c-axis preferred orientation of the ZnO film. The effects of target negative pressure on the structure and strain of ZnO thin films were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The results show that the grain size distribution of ZnO thin films varies from 16.7 nm to 39.0 nm with different target negative pressures, and the target negative pressure has little effect on the surface structure of ZnO thin films. The tensile stress of ZnO thin films under different target negative pressures Tensile stress increases with target negative pressure.