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本文是根据晶体管的发射结偏压随温度变化的关系,将温度补偿晶体管代换扩散硅压力传感器中的温度补偿电阻,从而制出一种新型高精度温度补偿压力传感器.
This paper is based on transistor emitter junction bias with the temperature changes in the relationship between the temperature compensation transistor substitution silicon diffused silicon temperature sensor in the temperature compensation resistor to produce a new type of high precision temperature compensation pressure sensor.