一、引言所谓固态压阻传感器,即传感器的核心部分—传感元件,是一种扩散硅应变元件。该应变元件是采用集成电路的扩散工艺,把硼杂质掺入硅片而形成压敏电桥制成的。测量原理是利用压阻效应, 敏感元件受压时,电阻发生变化,输出电信号。早在1932年美国布利戈曼和阿朗就对晶体压阻效应发生兴趣,同年阿朗发表了铋单 First, the introduction of the so-called solid-state piezoresistive sensor that is the core of the sensor - sensing element, is a proliferation of silicon strain components. The strain element is fabricated using a diffusion process of an integrated circuit by incorporating boron impurities into the silicon wafer to form a voltage-sensitive bridge. Measuring principle is the use of piezoresistive effect, the sensitive components under pressure, the resistance changes, the output signal. As early as 1932, Briggine and Allan of the United States took an interest in the crystal piezoresistive effect. In the same year, Arang published a list of bismuth single