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第二代红外成象系统需要供凝视应用的高密度焦平面阵列。为了满足这种要求,已研制采用HgCaTe光电二极管作探测器和Si电荷耦合器件(CCD)作信号处理器的焦平面结构。虽然一般的离子注入混合阵列已成功地与CCD多路传输器互连,但在液相外延层上制备的混合阵列却具有性能、处理能力和成品率方面的一些固有优点。用富Hg-熔体液相外延技术制备的异质结结构二极管得出了较之一般离子注入器件为优越的性能。器件具有高R_0A乘积和良好的组分均匀性。给出了为8～12μm和3～5μm应用所制器件的数据。
The second generation of infrared imaging systems require high-density focal plane arrays for gaze applications. In order to meet this requirement, a focal plane structure using a HgCaTe photodiode as a detector and a Si charge-coupled device (CCD) as a signal processor has been developed. While typical ion implantation hybrid arrays have been successfully interconnected with CCD multiplexers, hybrid arrays fabricated on liquid phase epitaxial layers have inherent advantages in terms of performance, processing power, and yield. Heterojunction structure diodes fabricated using Hg-rich liquid phase epitaxy give superior performance over conventional ion-implanted devices. The device has a high R_0A product and good component uniformity. The data for the devices made for 8 to 12 μm and 3 to 5 μm are given.