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静态功耗电流(I_(DDQ))测量是一种检测CMOS集成电路(IC)缺陷的非常有效的方法。这种方法能独到地检测出CMOS IC中的一些缺陷,如栅氧短路、PN结缺陷、寄生晶体管漏电。此外,监控I_(DDQ)可以检测到所有固定型故障,其优点是所用的节点翻转测试集,它的测试向量比固定型测试集的测试向量少。研究了从三个不同硅片生产地来的各个CMOS IC,对于给定的测试集,它们的I_(DDQ)状态增大的形态各不相同。当在传统功能测试集中增加I_(DDQ)测试时,微处理器、RAM和ROM等CMOS IC的失效增加了60～128％。
Static Power Current (I_ (DDQ)) measurement is a very effective way to detect CMOS integrated circuit (IC) defects. This method can uniquely detect CMOS IC some defects, such as short circuit gate oxide, PN junction defects, parasitic transistor leakage. In addition, monitoring I_ (DDQ) detects all fixed faults with the advantage that the node used flips the test set with less test vectors than the fixed test set. Various CMOS ICs fabricated from three different silicon wafers were studied, and their I_ (DDQ) states increased in different shapes for a given test set. When adding I_ (DDQ) tests to traditional functional test suites, CMOS ICs such as microprocessors, RAMs, and ROMs have failed 60 to 128% more efficiently.