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本文制备了纳米级的Hf/Hf O2基阻变存储器,阻变存储器上电极金属和下电极金属交叉,形成交叉点型的金属-氧化物-金属结构。系统地对其电学特性进行表征,包括forming过程、SET过程和RESET过程。详细研究了该阻变存储器SET电压与RESET电压,高阻态阻值与低阻态阻值间的关联性。该阻变存储器的电学参数与SET过程的电流限制值强相关,因此需要折中优化。利用量子点接触模型对Hf/Hf O2基阻变存储器的开关物理机制进行了分析。
In this paper, a nano-scale Hf / Hf O2-based resistive memory was fabricated. The metal of the upper electrode and the lower electrode of the resistive memory were crossed to form a cross-point metal-oxide-metal structure. Its electrical properties are systematically characterized, including the forming process, the SET process and the RESET process. The relationship between SET voltage, RESET voltage, high resistance state resistance and low resistance state resistance of the resistive memory is studied in detail. The resistive memory’s electrical parameters strongly correlate with the current limit of the SET process and therefore require compromise optimization. The switch physical mechanism of Hf / Hf O2 resistive memory is analyzed by quantum dot contact model.