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本文用深能级瞬态谱(DLTS)法,结合表面光伏(SPV)法和某些常规测试,较系统地研究了1MeV能量和不同剂量的电子辐照下对N型LPE-GaAs层逐次引入的缺陷。研究了400～550K温区等时退火行为。讨论了随辐照剂量逐次增大及等时退火后,缺陷浓度N_T的变化和少子扩散长度L_p随N_T的变化情况。首次用理论和实验手段论证了由电子辐照引入的所有电子缺陷能级中,E_3为主要的复合中心能级。同时通过对Shockley-Read-Hall公式的简化提出了一个在诸多缺陷能级中判别出其中主要复合中心能级的方法,实验结果也证实了这种判别方法是行之有效的。
In this paper, the deep level transient spectroscopy (DLTS) method, combined with surface photovoltage (SPV) method and some routine tests, systematically studied the 1MeV energy and different doses of electron irradiation of the N-type LPE-GaAs layer Defects. The isothermal annealing at 400 ~ 550K was studied. The changes of defect concentration N_T and the minority carrier diffusion length L_p with N_T are discussed with the successive increase of irradiation dose and isochronal annealing. For the first time, theoretical and experimental evidences show that E_3 is the main center of recombination energy among all electron defect levels induced by electron irradiation. At the same time, a method of determining the energy level of the main complex centers among many defect levels is proposed by simplifying the Shockley-Read-Hall formula. The experimental results also prove that this method is effective.