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针对广域光-接触多探针方法测量光刻胶表面形貌的需要,设计制作了Si基Si_3N_4弹性膜独立多探针,该探针呈9×9二维阵列分布。先利用ANSYS有限元软件分析探针Si_3N_4弹性薄膜的厚度和面积尺寸对探针测量范围的影响规律,得到了优化的几何参数。然后基于仿真结果,运用微机电系统(MEMS)技术中的硅基工艺、薄膜工艺和光刻工艺完成了多探针硅杯的腐蚀、弹性薄膜的沉积及SU-8胶质探针的制作,制备出独立多探针。初步测量Si基Si_3N_4弹性膜独立多探针单元的各项参数表明:Si_3N_4弹性膜的长度平均值为399.4μm,最大偏差为1.8%;SU-8胶质探针的尺寸为Φ99.1μm×27.8μm,最大偏差分别为1.9%和9.8%;探针间的平均距离为1.500 6 mm,最大偏差为0.6%。该探针的结构设计合理,制作工艺可行,可以用于大范围、快速测量方法。
In order to meet the need of wide area photo-contact multi-probe method to measure the surface morphology of photoresist, Si-Si_3N_4 elastic film multi-probe was designed and fabricated. The probe was distributed in a 9 × 9 two-dimensional array. The ANSYS finite element software was used to analyze the influence of the thickness and area size of Si_3N_4 elastic thin film on the measuring range of the probe, and the optimized geometrical parameters were obtained. Then, based on the simulation results, the corrosion of the multi-probe silicon cup, the deposition of the elastic thin film and the fabrication of the SU-8 colloidal probe are accomplished by the silicon-based process, the thin film process and the photolithography process in the MEMS technology. Multi-probes were prepared. The preliminary measurements of the Si-3N_4 elastic multilayers showed that the average length of the Si_3N_4 elastic film was 399.4μm and the maximum deviation was 1.8%. The size of the SU-8 glial probe was Φ99.1μm × 27.8 μm with the maximum deviation of 1.9% and 9.8% respectively. The average distance between probes is 1.500 6 mm and the maximum deviation is 0.6%. The structure of the probe is reasonable in design, production process feasible, can be used for a wide range of rapid measurement methods.