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本文首次报道了用金属有机化合物汽相沉积(MOCVD)技术在Si(111)衬底上生长MgO外延薄膜,采用不同工艺,制成[111]和[100]两种取向的外延薄膜。这些薄膜期望用于高温超导薄膜的衬底和一些光电子器件的掩盖层,将半导体和高温超导体结合起来。合成并提纯了两种有机源:2,2-二甲基-丙酸镁和二乙酰丙酮镁,应用这两种源,均得到了满
This paper reports for the first time the growth of MgO epitaxial films on Si (111) substrates by Metal Organic Vapor Deposition (MOCVD) and the fabrication of [111] and [100] epitaxial films using different processes. These films are expected to be used as a cover for high temperature superconducting thin film substrates and some optoelectronic devices, combining semiconductors and high temperature superconductors. Two organic sources were synthesized and purified: 2,2-dimethyl-magnesium propionate and magnesium diacetylacetonate, both of which were applied