用不同热处理条件对Hg_(0.8)Cd_(0.2)Te材料进行了高温热处理,样品温度的变化范围为430℃到600℃,汞源蒸汽压在样品的汞脱溶线和碲脱溶线之间变动。对淬火冷却后的样品进行变温和变磁场霍耳测量,求得与温度和磁场无关的样品霍耳浓度和热处理条件的关系以及空穴迁移率和空穴浓度的关系。文章首先对Hg_(0.8)Cd_(0.2)Te材料的缺陷机构作了比较系统的分析,证明二次电离汞空位是未掺杂P型Hg_(0.8)Cd_(0.2)Te材料中受主点缺陷的唯一可能 The Hg_ (0.8) Cd_ (0.2) Te materials were heat-treated at different temperatures. The sample temperature ranged from 430 ℃ to 600 ℃. The mercury source vapor pressure was between the mercury and the desolvation lines change. The temperature-dependent and magnetic field-Hall measurements were performed on the quenched and cooled samples to determine the relationship between the Hall concentration and the heat treatment conditions and the hole mobility and hole concentration. In this paper, the defect mechanism of Hg_ (0.8) Cd_ (0.2) Te is firstly systematically analyzed, and it is proved that the secondary ionization mercury vacancy is the acceptor point defect in undoped Hg_ (0.8) Cd_ (0.2) The only possibility