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研制和测试了K波段频率范围的微波高电子迁移率晶体管(HEMT)。这种HEMT具有选择低掺杂(AlGa)As/GaAs/(AlGa)As双异质结的独特结构,它可同时获得大电流密度和高的栅击穿电压。这种结构在室温下电子迁移率达6800cm~2/V.s,二维(2-D)电子密度高达1.2×10~(12)cm~(-2)。橱长为1μm,总栅宽为1.2mm的器件,在20GHz下输出功率达660mW(550mW/mm),相关增益为3.2dB,功率附加效率为19.3％。栅宽为2.4mm的同样器件得到1W的输出功率,3dB的增益以及15.5％的效率。这些结果表明了双异质结HEMT(DH-HEMT)的微波大功率的能力。
Developed and tested a microwave high electron mobility transistor (HEMT) in the K-band frequency range. This HEMT has a unique structure of choice for a low-doped (AlGa) As / GaAs / (AlGa) As double heterojunction, which achieves both high current density and high gate breakdown voltage. This structure has an electron mobility of 6800cm2 / Vs at room temperature and a 2-D electron density of 1.2x10-12 cm-2. The device has a cabinet length of 1μm and a total gate width of 1.2mm with an output power of 660mW (550mW / mm) at 20GHz with a gain of 3.2dB and a power added efficiency of 19.3%. The same device with a gate width of 2.4mm yields 1W of output power, 3dB gain, and 15.5% efficiency. These results demonstrate the microwave power capability of the double heterojunction HEMT (DH-HEMT).