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对镶嵌在SiO2 薄膜中纳米InAs颗粒的Raman散射谱进行了研究 .与大块InAs晶体相比 ,InAs纳米颗粒的Raman散射谱具有相似的特征 ,即由纵光学声子模和横光学声子模组成 ,但是散射峰宽化并红移 .用声子限域效应解释了散射峰的红移现象 ,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异 .
The Raman scattering spectra of InAs nanoparticles embedded in SiO2 thin films were studied.The Raman scattering spectra of InAs nanoparticles were similar to those of bulk InAs crystals, that is, the Raman scattering spectra of longitudinal and transverse optical phonon modes But the scattering peak broadens and red shifts.The redshift phenomenon of the scattering peak is explained by the phonon confinement effect and the difference between the redshift value and the theoretical value is explained according to the stress effect of InAs nanoparticles.