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用等离子体化学气相淀积法制备SnO_2/Fe_2O_3多层膜的界面处存在着一个厚度约为数百埃的O-Sn-Fe过渡层,而通常化学气相沉积法所制备的SnO_2/Fe_2O_3多层薄膜不存在与其相似的过渡层。不同SnO_2含量的烧结型SnO_2-Fe_2O_3复合材料的电导及气敏测量分析结果支持过渡层具有低电导、低灵敏特性的假设。AES,XPS及气敏特性的研究表明,退火过程不是形成过渡层的主要原因。过渡层的形成源与沉积过程中的等离子体的作用。
There is an O-Sn-Fe transition layer at the interface of SnO_2 / Fe_2O_3 multilayers prepared by plasma chemical vapor deposition at a thickness of several hundred angstroms. However, the SnO_2 / Fe_2O_3 multilayers usually prepared by chemical vapor deposition The film does not have a similar transition layer. Conductivity and gas sensing measurements of sintered SnO_2-Fe_2O_3 composites with different SnO_2 contents support the hypothesis that the transition layer has low conductivity and low sensitivity. AES, XPS and gas sensing properties of the study shows that the annealing process is not the main reason for the formation of transition layer. The formation of transitional layer and deposition of the plasma process.