实验研究了微氮硅单晶在７００℃，１０５０℃单步退火及二步退火的氧沉淀，指出破、氮杂质对低温退火生成的氧沉淀有明显促进作用，而对中温退火的氧沉淀基本没有影响，主要取决于原始氧浓度．实验还研究了低温预退火促进氧沉淀及氧沉淀延迟现象，探讨了碳氮杂质在氧沉淀中的作用． The single-step annealing and the second-step annealing of the micro-nitrogen single crystal at 700 ℃ and 1050 ℃ have been studied experimentally. It is pointed out that the broken and the nitrogen impurities can promote the oxygen precipitation produced by the low-temperature annealing obviously. However, No effect, mainly depends on the original oxygen concentration. The experiment also studied the pre-annealing at low temperature to promote the oxygen precipitation and oxygen precipitation delay phenomenon, discusses the carbon and nitrogen impurities in the role of oxygen precipitation.