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为了进一步提高小尺寸金属氧化物半导体(MOSFET)的性能,在应变硅器件的基础上,提出了一种新型的异质栅MOSFEET器件结构.通过求解二维Poisson方程,结合应变硅技术的物理原理,建立了表面势、表面电场以及阈值电压的物理模型,研究了栅金属长度、功函数以及双轴应变对其的影响.通过仿真软件ISE TCAD进行模拟仿真,模型计算与数值模拟的结果基本符合.研究表明:与传统器件相比,本文提出的异质栅应变硅新器件结构的载流子输运效率进一步提高,可以很好地抑制小尺寸器件的短沟道效应、漏极感应势垒降低效应和热载流子效应,使器件性能得到了很大的提升.
In order to further improve the performance of small-size metal-oxide-semiconductor (MOSFET), a novel hetero-gate MOSFEET device structure is proposed based on strained silicon device. By solving the two-dimensional Poisson's equation and combining with the physical principle of strained silicon , The physical model of surface potential, surface electric field and threshold voltage was established and the effects of gate metal length, work function and biaxial strain on the simulation were studied.The results of model calculation and numerical simulation are basically in accordance with the simulation software ISE TCAD The research shows that compared with the traditional devices, the novel heterostructure GaN-based devices have higher carrier transport efficiency and can suppress the short-channel effect of the small-size devices. The drain sensing barrier Reduce the effect and hot carrier effect, the device performance has been greatly improved.