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采用直流反应磁控溅射工艺在25、300℃沉积温度下分别制备了ZrO2薄膜和YSZ薄膜。结果表明,沉积温度对ZrO2薄膜沉积速率的影响不大,而对YSZ薄膜沉积速率的影响则很大。与YSZ薄膜相比,ZrO2薄膜容易形成结晶态。25℃时所制备的ZrO2薄膜为非晶态,300℃时则为单斜晶体结构,薄膜的结晶程度随沉积温度的升高而提高。而两种温度下制备的YSZ薄膜均为非晶态薄膜。随沉积温度的升高,ZrO2薄膜表面变得致密光滑,而YSZ薄膜表面则变得粗糙不平。
ZrO2 thin films and YSZ thin films were prepared by direct current reactive magnetron sputtering at 25,300 ℃. The results show that the deposition temperature has little effect on the deposition rate of ZrO2 film, but has a great influence on the deposition rate of YSZ film. Compared with YSZ thin films, ZrO2 thin films tend to form crystalline states. The ZrO2 films prepared at 25 ℃ are amorphous and monoclinic at 300 ℃. The crystallinity of the films increases with increasing deposition temperature. YSZ films prepared at both temperatures are amorphous films. With the increase of deposition temperature, the surface of ZrO2 film becomes dense and smooth, while the surface of YSZ film becomes rough.