Intensified CCD Image Sensor^①

来源 :半导体光子学与技术:英文版 | 被引量 : 0次 | 上传用户:yjsngmmsnjy
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Work has been done with extending the useful imaging and detection rage of CCD.This was accomplished through direct optical coupling and bonding of image intensifiers to the CCD.It has been shown that the useful range of a CCD may be extended two orders o
其他文献
The relation between threshold voltage for hydrogenated amorphous silicon thin film transistors(a-Si:HTFTs)and deposition conditions for hydrogenated amorphous
The signal processing circuits of position sensitive detector(PSD)with alternating light source are presented.The measuring device of PSD with alternating light
Some new results of implant disordering on InP based MQW structures by im-planted compositional disordering are presented.The energy shift of PL peak depends on
The hole injection ,the radiative recombination and the device lumi-nescent efficiencies of amorphous silicon carbide thin film p-I-n junction light emit-ting d
The dark current of In0.47Ga0.53As/InP heterojunction photodiodes (HPDs)was analysed.We found that there exists a new dark current compo-nent-deep level-assiste
应用阵列空间的积,决定了不可约阵列的网络空间的结构。
The mobilities of holes in thin,spin-casting films of poly(N-vinylcarbazole)(PVK) based on silicium are measured using a time-of-flight(TOF)technique.The drift
A technique of fast 360°spinning 3D measurement is realized.A laser diode used as light source produces 0.5mm wide slit which is projected onto the surface
The principle of a new optical fiber temperature transducer is presented,and ingenious design scheme of this transducer is given.Because taking the special modu