论文部分内容阅读
AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the AlxGa1-xN/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer.
AlN / Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN / AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the AlxGa1-xN / AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN / AlGaN The result of atomic force microscopy indicates that AlN / AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2- inch wafer.