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GeS_6 chalcogenide amorphous fi lm was deposited on glass substrate via PLD(pulsed laser deposition) technique. The performance and structure of the fi lm was characterized by XRD(X-ray diffraction), SEM(Scanning Electron Microscopy), EDS(Energy Dispersive Spectroscopy), optical transmission spectra, and Raman spectra, etc. The GeS_6 amorphous fi lm was irradiated by 532 nm linearly polarized light, and its photoinduced darkening was investigated. The results showed that the GeS_6 chalcogenide amorphous fi lm was smooth and compact with uniform thickness and combined with the substrate fi rmly, and its chemical composition was in consistency with the bulky target. When laser energy was fi xed, the transparence of the fi lm declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the fi lm after laser irradiation were observed in this investigation.
GeS_6 chalcogenide amorphous fi lm was deposited on glass substrate via PLD (pulsed laser deposition) technique. The performance and structure of the fi lm was characterized by XRD (X-ray diffraction), SEM (Scanning Electron Microscopy), EDS ), optical transmission spectra, and Raman spectra, etc. The GeS_6 amorphous fi lm was irradiated by 532 nm linearly polarized light, and its photoinduced darkening was investigated. The results showed that the GeS_6 chalcogenide amorphous fi lm was smooth and compact with uniform thickness and combined with the substrate fi rmly, and its chemical composition was in consistency with the bulky target. When laser energy was fi xed, the transparence of the fi lm declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the fi lm after laser irradiation were observed in this investigation.