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本文计算用于探测8～12μm波段辐射的Hg_(1-x)Cd_xTe光电二极管线列的噪声等效温差(NETD)。用材料性能作为参数,给出光电二极管的暗电流、信号和背景的光电流对光电二极管的截止波长及工作温度的依赖关系,并计算NETD与这些参数的关系。当非平衡载流子寿命和体掺杂级作为参数时,根据Hg_(1-x)Cd_xTe的克分子组分来确定NETD的最佳数值。获得了光电二极管的最适宜的截止波长和工作温度。对于现行技术和77K的焦平面温度来说,证明了实例系统的最适宜的截止波长是在9.5～10.5μm范围内。
In this paper, the noise equivalent temperature difference (NETD) of the Hg_ (1-x) Cd_xTe photodiode line array for detecting radiation in the 8-12 μm band is calculated. Using material properties as a parameter, the dependence of photodiode dark current, signal and background photocurrent on photodiode cutoff wavelength and operating temperature is given and the relationship between NETD and these parameters is calculated. When the non-equilibrium carrier lifetime and the bulk doping level are used as parameters, the best numerical value of NETD is determined from the molecular composition of Hg_ (1-x) Cd_xTe. The optimum cutoff wavelength and operating temperature of the photodiode are obtained. For the prior art and the focal plane temperature of 77K, the optimum cut-off wavelength of the example system is demonstrated to be in the range of 9.5 to 10.5 [mu] m.