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一、引言难熔金属及其硅化物的研究是当前VLSI 工艺研究中的一个十分活跃的领域,它的应用研究有效地解决了 VLSI 工艺中的几个问题:(1)采用难熔金属或其硅化物解决由于 MOS 电路图形尺寸缩小带来的栅电阻和连线电阻增大的问题;(2)采用硅化物(P_1Si_2)—阻挡层(W.M_oT_i 等)—Al
I. INTRODUCTION The research of refractory metals and their silicides is a very active field in the current VLSI process research. Its applied research effectively solves several problems in the VLSI process: (1) The use of refractory metals or their Silicide solves the problem that the gate resistance and the connection resistance increase due to the reduction of the size of the MOS circuit pattern; (2) the use of the silicide (P 1 Si 2) barrier layer (W.M_oT_i etc.) -Al