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采用直流磁控溅射方法在石英衬底上沉积Nb薄膜,通过四探针电阻测试仪、X射线衍射(XRD)、原子力显微镜(AFM)等测试分析,研究不同衬底温度对Nb薄膜的晶体结构、应力情况、表面形貌和电性能的影响.所制备的Nb薄膜在(110)晶面方向存在明显的择优取向,提高沉积温度可以使结晶质量变好,缓解铌膜内部应力,表面更加致密平整;合适的沉积温度有利于铌膜电阻率的减小,在400℃附近制备的Nb膜电阻率最小(约为18.5μΩ-cm),其临界转变温度(Tc)为9.1K,表明具有良好的超导特性.
Nb thin films were deposited on quartz substrates by DC magnetron sputtering. The effects of different substrate temperatures on the crystal structure of Nb thin films were investigated by four-probe resistance tester, X-ray diffraction (XRD) and atomic force microscopy (AFM) Structure, stress condition, surface morphology and electrical properties of the Nb thin films.With the preferential orientation of the (110) crystal plane, the Nb thin films prepared by this method have better preferential orientation in the direction of (110) Dense and smooth. The suitable deposition temperature is conducive to the decrease of the resistivity of the niobium film. The Nb film prepared near 400 ℃ has the lowest resistivity (about 18.5μΩ-cm) and the critical transition temperature (Tc) 9.1K, Good superconducting properties.