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以n型 ( 10 0 )Si为衬底 ,用CH4 和H2 作反应气体 ,在 150℃的衬底温度下淀积了非晶碳平面薄膜 .SEM照片和AFM均显示该薄膜具有很好的均匀性 ,非晶碳粒的尺寸为 90～ 10 0nm .喇曼谱分析表明 ,薄膜的主要成分为SP2 非晶碳 .对样品薄膜的不同区域进行了场发射特性的测试 ,各被测区域的场发射特性表现出很好的一致性 .在不同电压下进行了发光测试 .实验表明 ,样品薄膜的开启电场很低 ,约为 4V/ μm ,在 7V/ μm的电场下 ,场发射电流密度为 0 0 16A/cm2 ;用迭代法计算得薄膜的功函数为 0 65V .通过对样品的实际发射面积估算 ,得出发射点密度为 6× 10 4cm- 2 .
Amorphous carbon planar films were deposited on n-type (100) Si substrates using CH4 and H2 as reaction gases at a substrate temperature of 150 ° C. Both SEM and AFM showed that the films had good uniform The size of amorphous and amorphous carbon particles was 90 ~ 100 nm.The Raman spectrum analysis showed that the main component of the film was SP2 amorphous carbon.The field emission characteristics of different regions of the sample film were tested. The field of each measured region Emission characteristics showed good consistency.LED test was carried out under different voltage.The experiment shows that the open-field of the sample film is very low, about 4V / μm, the field emission current density is 0 at 7V / μm 0 16A / cm2. The work function of the film calculated by iterative method is 0 65 V. By estimating the actual emission area of the sample, the density of the emitted spot is 6 × 10 4 cm -2.