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介绍了在GaAs器件制作中,如何提高光刻细线条加工能力、制作深亚微米“T”型栅的工艺技术。该技术采用投影光刻和负性化学放大光刻胶,制作出0.18μm的“T”型栅GaAs PHEMT器件,栅光刻工艺采用了分辨率增强移相掩模技术。根据曝光工具简单介绍了当前GaAs器件中“T”型栅主要制作方法,讨论了“T”型栅制作中所使用的移相掩模原理以及该技术应用于GaAs器件制作的优势,并介绍了工艺制作过程。给出了所制作的“T”型栅扫描电镜剖面照片,并进一步试验、讨论和分析了采用该种移相掩模版进行光刻时所遇到的主要困难及解决方向。
This paper introduces the technology of how to improve the processing capability of photolithography lines and manufacture the deep submicron “T ” gate in GaAs device fabrication. The technology uses projection lithography and negative chemically amplified photoresist to produce a 0.18μm “T” gate GaAs PHEMT device. The gate lithography process uses a resolution-enhanced phase shift mask technique. According to the exposure tool, the main fabrication methods of “T” gate in current GaAs devices are briefly introduced. The principle of the phase shift mask used in the fabrication of “T” gate and the advantages of the technique applied to GaAs device fabrication are discussed , And introduced the craft making process. The “T” type gate scanning electron microscope (SEM) cross-sectional photographs are given, and the main difficulties encountered in the lithography using this phase-shifting reticle are discussed and analyzed.