搜索筛选:
搜索耗时2.4847秒,为你在为你在102,285,761篇论文里面共找到 8 篇相符的论文内容
发布年度:
[会议论文] 作者:Ming Liu,Qi Liu,Shibing Long,Hangbing Lv,
来源:International Conference on Nanoscience & Technology,China 2 年份:2013
Resistive switching memory (RRAM) based on a solid-elelctrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory,analog circuits and neuromorphic application.A...
Characteristics and Mechanism of Multimode Resistive Switching Behaviors in the Oxide-electrolyte-ba
[会议论文] 作者:Ming Liu,Qi Liu,Haitao Sun,Shibing Long,Hangbing Lv,
来源:The 6th International Conference on Nanoscience and Technolo 年份:2015
Resistive switching (RS) phenomenon induced by redox in oxide electrolyte shows fascinating prospects for potential applications in resistance random access memory (RRAM), analog circuits and neuromor...
Microscopic Origin of Transition from Threshold Switching to Memory Switching in Oxide-electrolyte-b
[会议论文] 作者:Ming Liu,Qi Liu,Haitao Sun,Congfei Li,Hangbing Lv,Shibing Long,
来源:2013年纳米、表面和Graphene科学与技术全国会议 年份:2013
Resistive switching phenomenon based on the redox-induced conductivity change in some solid-elelctrolyte insulator attracts considrable interest as a new techno...
[期刊论文] 作者:Nianduan Lu,Pengxiao Sun,Ling Li,Qi Liu,Shibing Long,Hangbing Lv,Ming Liu,
来源:中国物理B(英文版) 年份:2016
...
Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improv
[期刊论文] 作者:Qiao Wang,Donglin Zhang,Yulin Zhao,Chao Liu,Xiaoxin Xu,Jianguo Yang,Hangbing Lv,
来源:半导体学报:英文版 年份:2021
In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlinear issue of......
Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neu
[期刊论文] 作者:Qingting DING,Tiancheng GONG,Jie YU,Xiaoxin XU,Xiaoyan LI,Hangbing LV,Jianguo YANG,Qing LUO,Peng YUAN,
来源:中国科学:信息科学(英文版) 年份:2021
Dear editor,rnMemristors,resistive random access memory (RRAM) de-vices when used in memory applications,have attracted sig-nificant interest recently as a promising candidate for neuro-morphic computing systems due to their excellent size ......
[期刊论文] 作者:Shibing Long,Hang Dong,Qiming He,Guangzhong Jian,Ying Zhang,Xiaohu Hou,Pengju Tan,Zhongfang Zhang,Hangbing Lv,
来源:中国物理B(英文版) 年份:2019
Ultraviolet (UV) photodetectors (PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its...
[期刊论文] 作者:Xiaoxin Xu,Chuanbing Chen,Tiancheng Gong,Zhaoan Yu,Qing Luo,Peng Yuan,Danian Dong,Qi Liu,Shibing Long,Hangbing Lv,
来源:中国物理B(英文版) 年份:2018
The tail bits of intermediate resistance states (IRSs) achieved in the SET process (IRSs) and the RESET process (IRSR) of conductive-bridge random-access memory...
相关搜索: