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[会议论文] 作者:Ming Liu,Qi Liu,Shibing Long,Hangbing Lv, 来源:International Conference on Nanoscience & Technology,China 2 年份:2013
Resistive switching memory (RRAM) based on a solid-elelctrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory,analog circuits and neuromorphic application.A...
[会议论文] 作者:Ming Liu,Qi Liu,Haitao Sun,Shibing Long,Hangbing Lv, 来源:The 6th International Conference on Nanoscience and Technolo 年份:2015
Resistive switching (RS) phenomenon induced by redox in oxide electrolyte shows fascinating prospects for potential applications in resistance random access memory (RRAM), analog circuits and neuromor...
[会议论文] 作者:Ming Liu,Qi Liu,Haitao Sun,Congfei Li,Hangbing Lv,Shibing Long, 来源:2013年纳米、表面和Graphene科学与技术全国会议 年份:2013
Resistive switching phenomenon based on the redox-induced conductivity change in some solid-elelctrolyte insulator attracts considrable interest as a new techno...
[期刊论文] 作者:Nianduan Lu,Pengxiao Sun,Ling Li,Qi Liu,Shibing Long,Hangbing Lv,Ming Liu, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Qiao Wang,Donglin Zhang,Yulin Zhao,Chao Liu,Xiaoxin Xu,Jianguo Yang,Hangbing Lv, 来源:半导体学报:英文版 年份:2021
In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlinear issue of......
[期刊论文] 作者:Qingting DING,Tiancheng GONG,Jie YU,Xiaoxin XU,Xiaoyan LI,Hangbing LV,Jianguo YANG,Qing LUO,Peng YUAN, 来源:中国科学:信息科学(英文版) 年份:2021
Dear editor,rnMemristors,resistive random access memory (RRAM) de-vices when used in memory applications,have attracted sig-nificant interest recently as a promising candidate for neuro-morphic computing systems due to their excellent size ......
[期刊论文] 作者:Shibing Long,Hang Dong,Qiming He,Guangzhong Jian,Ying Zhang,Xiaohu Hou,Pengju Tan,Zhongfang Zhang,Hangbing Lv, 来源:中国物理B(英文版) 年份:2019
Ultraviolet (UV) photodetectors (PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its...
[期刊论文] 作者:Xiaoxin Xu,Chuanbing Chen,Tiancheng Gong,Zhaoan Yu,Qing Luo,Peng Yuan,Danian Dong,Qi Liu,Shibing Long,Hangbing Lv, 来源:中国物理B(英文版) 年份:2018
The tail bits of intermediate resistance states (IRSs) achieved in the SET process (IRSs) and the RESET process (IRSR) of conductive-bridge random-access memory...
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