搜索筛选:
搜索耗时2.8595秒,为你在为你在102,285,761篇论文里面共找到 8 篇相符的论文内容
发布年度:
,Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs
[期刊论文] 作者：Shu-Xiang Sun,Hui-Fang Ji,Hui-Juan Yao,Sheng Li,Zhi Jin,Peng Ding,Ying-Hui Zhong,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：Diao Han-Hu,Zheng Ying-Hui,Zhong Yue,Zeng Zhi-Nan,Ge Xiao-Chun,Li Chuang,Li Ru-Xin,
来源：中国物理B（英文版） 年份：2014
...
,Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InG
[期刊论文] 作者：Ying-hui ZHONG,Shu-xiang SUN,Wen-bin WONG,Hai-li WANG,Xiao-ming LIU,Zhi-yong DUAN,Peng DING,Zhi JIN,
来源：信息与电子工程前沿（英文版） 年份：2017
A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-bas...
A comparative study on radiation reliability of composite channel InP high electron mobility transis
[期刊论文] 作者：Jia-Jia Zhang,Peng Ding,Ya-Nan Jin,Sheng-Hao Meng,Xiang-Qian Zhao,Yan-Fei Hu,Ying-Hui Zhong,Zhi Jin,
来源：中国物理B（英文版） 年份：2021
This paper proposes a reasonable radiation-resistant composite channel structure for InP HEMTs.The simulation results show that the composite channel structure...
[期刊论文] 作者：Ying-hui ZHONG,Shu-xiang SUN,Wen-bin WONG,Hai-li WANG,Xiao-ming LIU,Zhi-yong DUAN,Peng DING,Zhi JIN,,
来源：Frontiers of Information Technology & Electronic Engineering 年份：2017
本文针对 InAlAs/InGaAs InP基高电子迁移率晶体管(High electron mobility transistors, HEMTs)提出了一种结合高选择性湿法腐蚀和非选择性数字湿法腐蚀的两步栅槽腐蚀工艺...
[期刊论文] 作者：Shu-Xiang Sun,Ming-Ming Chang,Meng-Ke Li,Liu-Hong Ma,Ying-Hui Zhong,Yu-Xiao Li,Peng Ding,Zhi Jin,Zhi-Chao,
来源：中国物理B（英文版） 年份：2019
The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through...
[期刊论文] 作者：Shu-Xiang Sun,Zhi-Chao Wei,Peng-Hui Xia,Wen-Bin Wang,Zhi-Yong Duan,Yu-Xiao Li,Ying-Hui Zhong,Peng Ding,
来源：中国物理B（英文版） 年份：2018
InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications.The proton irradiatio...
[期刊论文] 作者：Ying-Hui Zhong,Bo Yang,Ming-Ming Chang,Peng Ding,Liu-Hong Ma,Meng-Ke Li,Zhi-Yong Duan,Jie Yang,Zhi Jin,
来源：中国物理B（英文版） 年份：2020
An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si...
相关搜索：
