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,Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin Al
[期刊论文] 作者：ZHOU Mei,ZHAO De-Gang,
来源：中国物理快报（英文版） 年份：2007
We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n--Ga...
[期刊论文] 作者：SONG Li,ZHAO De-gang,WU Yong-j,
来源：中国农业科学：英文版 年份：2009
We report here a seed transformation of sonication-assisted, no-tissue culture to rapidly produce transgenic Brassica napus plants. This method comprises the st...
,Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sh
[期刊论文] 作者：He Xiao-Guang,Zhao De-Gang,Jiang De-Sheng,
来源：中国物理B（英文版） 年份：2015
...
[期刊论文] 作者：DENG Dong-mei,WANG Jin-yan,ZHAO De-gang,WEN Zheng,
来源：城市道桥与防洪 年份：2004
The persistent photoconductivity(PPC) phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition(MOCVD) have been studied. After using some t...
[期刊论文] 作者：WANG Xiao-Lan,ZHAO De-Gang,YANG Hui,LIANG Jun-Wu,
来源：中国物理快报（英文版） 年份：2007
A high-Al-content AlCaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire bylow pressure metalorganic chemical vapour deposition. T...
[会议论文] 作者：Song Li,Zhao De-gang,Wu Yong-jun,Li Yi,
来源：13th International Biotechnology Symposium and Exhibition(第1 年份：2008
...
[期刊论文] 作者：SUN He-Hui,GUO Feng-Yun,LI Deng-Yue,WANG Lu,ZHAO De-Gang,ZHAO Lian-Cheng,
来源：中国物理快报（英文版） 年份：2012
Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strainmodified interlayers.In the case of multiple-quantum-well...
,Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate w
[期刊论文] 作者：Shi Ming,Chen Ping,Zhao De-Gang,Jiang De-Sheng,Zheng Jun,Cheng Bu-Wen,Zhu Jian-Jun,
来源：中国物理B（英文版） 年份：2015
...
,Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescenc
[期刊论文] 作者：He Xiao-Guang,Zhao De-Gang,Jiang De-Sheng,Zhu Jian-Jun,Chen Ping,Liu Zong-Shun,Le Ling-Cong,
来源：中国物理B（英文版） 年份：2015
...
,Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au c
[期刊论文] 作者：Li Xiao-Jing,Zhao De-Gang,Jiang De-Sheng,Chen Ping,Zhu Jian-Jun,Liu Zong-Shun,Le Ling-Cong,
来源：中国物理B（英文版） 年份：2015
...
[期刊论文] 作者：Liu Wei,Zhao De-Gang,Jiang De-Sheng,Chen Ping,Liu Zong-Shun,Zhu Jian-Jun,Li Xiang,
来源：中国物理B（英文版） 年份：2015
...
,Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple q
[期刊论文] 作者：Yang Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Li Liang,Wu Liang-Liang,
来源：中国物理B（英文版） 年份：2014
...
,Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifet
[期刊论文] 作者：Yang Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Li Liang,Wu Liang-Liang,
来源：中国物理B（英文版） 年份：2013
...
,Influences of polarization effect and p-region doping concentration on the photocurrent response of
[期刊论文] 作者：Li Xiao-Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Wu Liang-Liang,Li Liang,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：Li Liang,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Wu Liang-Liang,Le Ling-Cong,
来源：中国物理B（英文版） 年份：2013
...
[期刊论文] 作者：CHEN Ping,ZHAO De-Gang,FENG Mei-Xin,JIANG De-Sheng,LIU Zong-Shun,ZHANG Li-Qun,LI De-Yao,
来源：中国物理快报（英文版） 年份：2013
An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by m...
[期刊论文] 作者：ZHAO De-Gang,JIANG De-Sheng,LIU Zong-Shun,ZHU Jian-Jun,WANG Hui,ZHANG Shu-Ming,YANG Hui,
来源：中国物理快报（英文版） 年份：2009
The gain mechanism in GaN Sehottky barrier ultraviolet photodetectors is investigated by focused light beam.When the incident light illuminates the central regi...
,Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Che
[期刊论文] 作者：HAO Xiao-Peng,WANG Bao-Yi,Yu Run-Sheng,WEI Long,WANG Hui,ZHAO De-Gang,HAO Wei-Chang,
来源：中国物理快报（英文版） 年份：2008
We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution.The...
,Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Mul
[期刊论文] 作者：ZHAO De-Gang,JIANG De-Sheng,ZHU Jian-Jun,LIU Zong-Shun,ZHANG Shu-Ming,WANG Yu-Tian,YANG Hui,
来源：中国物理快报（英文版） 年份：2008
Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of In GaN multiplem quantum wells (MQWs) are investigated. It i...
[期刊论文] 作者：LI Liang,ZHAO De-Gang,JIANG De-Sheng,LIU Zong-Shun,CHEN Ping,WU Liang-Liang,LE Ling-Cong,
来源：中国物理快报（英文版） 年份：2013
InGaN is a commonly used compound semiconductor.Its unique properties such as high absorption coefficient,high mobility,and tunable energy gap indicate its pote...
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