Wafers相关论文
Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) waf
Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H–SiC substrate. The effects of graphi......
CdZnTe wafers were machined by lapping and mechanical polishing processes, and their surface and subsurface damages were......
1INTRODUCTIONFormanyyears,warpageofsiliconwafershasbeenconcernedinverylargescaleintegratedcircuit(VLSI)manufacturing[1-4].Us.........
晶片在双面抛光加工过程中具有多向运动、受力复杂,表面材料微细去除的特征,晶片的运动和受力是影响双面抛光加工质量的主要因素。本......
AIM:To investigate changes on magnetic resonance imaging(MRI) which occur with intracavitary Gliadel wafer placement in ......
Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscopeat room temperature fo......
无损筛选是当前研究常规电路与加固电路具有抗辐能力的有效方法,而无损筛选通常是指对电路最终产品进行的一种筛选。本文将以L54HC0......
Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan Acoustic Scanning Microscop
In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic im......
Challenges in Processing Diamond Wire Cut and Black Silicon Wafers in Large-Scale Manufacturing of H
Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar ......