采用反应磁控溅射方法制备了一系列不同铝含量的Zr-Al-Si-N复合膜,用能谱仪、X射线衍射仪和显微硬度计对复合膜进行表征,研究了铝......

利用射频反应磁控溅射设备在不同N2分压下制备了Zr-Si-N纳米复合薄膜。研究了N2分压对薄膜组织和性能的影响。结果表明:随着N2分压......

Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepar......

用反应磁控溅射法在不同偏压下沉积了Zr-Si-N扩散阻挡层.结果表明:Zr-Si-N膜的成分、电阻率和结构均随偏压的改变而不同;随着溅射......

用反应磁控溅射法在不同偏压下沉积了Zr-Si-N扩散阻挡层,结果表明:Zr-Si-N膜的Si含量、电阻率随偏压的升高而降低;Zr-Si-N膜的晶体......

Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepar......