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5. Investigation of plasma parameters in dual antenna CF4/Ar/O2 inductively coupled plasma

Investigation of plasma parameters in dual antenna CF4/Ar/O2 inductively coupled plasma

来源 :13th Asia-Pacific Conference on Plasma Science and Technolog | 被引量 : 0次 | 上传用户：shujun2000

【摘 要】

：

In general,CF4/Ar/O2 mixture plasma have been wieldy used in semiconductor etching processes.It is required a dedicated and controllable etching technology in CF4/Ar/O2 etching system,but it is not ea

【作 者】

：

Sangho Park Duksun Han Se Youn Moon 

【机 构】

：

Department of Applied Plasma Engineering, Chonbuk National University, 567 Baekje-daero, Deokjin-gu,

【出 处】

：

13th Asia-Pacific Conference on Plasma Science and Technolog

【发表日期】

：

2016年10期

【关键词】

：

DUAL ANTENNA inductively coupled plasma CF4 

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论文部分内容阅读

　　In general,CF4/Ar/O2 mixture plasma have been wieldy used in semiconductor etching processes.It is required a dedicated and controllable etching technology in CF4/Ar/O2 etching system,but it is not easy to measure plasma parameters directly using a Langmuir probe because of depositing gas characteristics.

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