热激电流谱确定CZT∶In中的陷阱能级

来源 :2012 Postdoctoral Symposium of China on Materials Science & | 被引量 : 0次 | 上传用户：ciximdt

【摘要】

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【出处】

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2012 Postdoctoral Symposium of China on Materials Science &

【发表日期】

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2012年8期

【关键词】

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Cd1-xZnxTe 陷获深能级热激电流谱

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　　熔体法生长的半绝缘碲锌镉(Cd1-xZnxTe或者CZT)晶体中存在着很多缺陷，这些缺陷作为陷获中心在带隙中引入了深能级，从而严重影响CZT的探测性能.分别采用初始上升法和同步多峰分析法(SIMPA)分析热激电流谱(TSC)，从而获得了半绝缘的铟掺杂的Cd0.9Zn0.1Te晶体中的陷阱能级分布.结果表明：由丁重叠峰的干扰，初始上升法在确定陷阱峰的最大值时会产生较大的误差；而SIMPA法被证实适用于分离重叠峰，可同步获得较全面的陷阱能级分布.基于此，获得了半绝缘CZT：In晶体的缺陷能级分布结果，即包含十个陷阱能级和一个影响暗电流分布的深施主能级EDD.此外，通过EDD能级与费米能级的关系，解释了CZT∶In晶体获得高阻特性的原因.

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热激电流谱确定CZT∶In中的陷阱能级

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