本文描述了一个提取MOS场效应晶体管和双极型晶体管直流模型参数的程序。所采用的算法是Meger和Roth方法,它具有较好的收敛性。在目标函数中引入惩罚项,有效地防止了模型参数非物理解的出现。将双极型晶体管直流模型参数分组后优化提取,减少了计算量。应用本程序进行了大量实际器件参数的提取,获得了较满意的结果。 This article describes a procedure for extracting the parameters of a DC model of a MOS field effect transistor and a bipolar transistor. The algorithms used are the Meger and Roth methods, which have good convergence. The introduction of penalty items in the objective function effectively prevents the appearance of non-physical solutions of model parameters. Bipolar transistor DC model parameters optimized extraction, reducing the amount of computation. A large number of actual device parameters were extracted using this program, and satisfactory results were obtained.