SiC BJT代表了最具吸引力的SiC开关结构之一,具有很低的电阻系数、较快的开关速度以及较小的温度依赖性。其良好的短路能力及不存在二次击穿可实现器件可靠工作。我们对与实际应用直接相关的器件性能进行了详细研究,并对以降耗为目的的驱动解决方案进行了测试。鉴于光伏系统降低成本的压力不断增加,我们额外进行了以实现节约为目的的实验,不仅基于SiC技术,同时包括新型磁芯材料方面。为此,我们在实验室中对一个额定功率为17kW的小型升压转换器进行了测试,并在本文中给出了结果。 SiC BJT represents one of the most attractive SiC switching structures with low resistivity, fast switching speed and small temperature dependence. Its good short circuit capability and the absence of secondary breakdown make the device reliable. We conducted a detailed study of the device performance directly related to the practical application and tested the drive solution for the purpose of reducing the power consumption. In view of the ever-increasing pressure to reduce costs for photovoltaic systems, we conducted additional experiments to achieve savings based not only on SiC technology, but also on new core materials. To do this, we tested a small boost converter rated at 17kW in the lab and gave the results in this article.