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在结型场效应管(J-FET)和恒流管(CRD)的生产中(CRD实质上是一个栅源短路的结型场效应器件),除了它的参数要求及相应的图形尺寸设计外,顶栅扩散是控制管子导电沟道宽窄的一道重要工序,如果沟道控制得不精确,就达不到产品所要求的I_(DSS)到I_H.原因是要么顶栅扩散结果太浅,致使沟道宽度过大,I_(DSS)或I_H超过某一规定值;要么顶栅扩散结深太深,致使顶栅扩穿整个外延层,没有I_(DSS)或I_H,其结果使得整批整批的片子成为废品.所以顶栅扩散精确地控制沟道宽度便成为生产中尤为突出的问题.
In the production of J-FETs and CRDs (the CRD is essentially a gate-source short-circuit junction field effect device), in addition to its parametric requirements and the corresponding graphic size design , Top-gate diffusion is an important process for controlling the width of the conductive channel of the tube. If the channel is not controlled accurately, it will not reach the required DS (I DSS) to I_H of the product. The reason is that either the top gate diffusion result is too shallow, Channel width is too large, I DSS or I_H exceeds a certain value; or top gate diffusion junction depth is too deep, resulting in the top gate diffusion through the entire epitaxial layer, there is no I DSS or I_H, the result of the entire batch The batch of films became scrap, so top-gate diffusion precisely controlling channel width became a particularly prominent issue in production.