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利用气态源分子束外延,采用相对较高的1.1%μm-1失配度变化速率,在InAlAs递变缓冲层上生长了晶格失配度高达2.6%的InP基InGaAs变形晶格探测器结构,并与采用相同结构而晶格失配度为1.7%和2.1%的探测器样品进行了比较。通过原子力显微镜、X射线衍射、光致发光和器件特性测试对样品进行了表征。结果显示该晶格失配度达2.6%的探测器结构具有较好的表面形貌、较大的晶格弛豫度和理想的光学特性。器件室温截止波长约为2.9μm,直径为300μm的器件室温下在反向偏压10mV时的暗电流为2.56μA。
InGaAs deformed lattice detector structure with up to 2.6% lattice mismatch growth was grown on InAlAs buffer layer by gas source molecular beam epitaxy with a relatively high rate of mismatch change of 1.1% μm-1 And compared to detector samples with the same structure with lattice mismatch of 1.7% and 2.1%. The samples were characterized by atomic force microscopy, X-ray diffraction, photoluminescence and device characterization. The results show that the detector structure with lattice mismatch up to 2.6% has better surface morphology, larger lattice relaxation and ideal optical properties. The device has a cutoff wavelength of about 2.9 μm at room temperature and a dark current of 2.56 μA at a reverse bias of 10 mV at room temperature for devices with 300 μm diameter.