通过对接近式光刻中光通过掩模版后的近场衍射特性的计算机模拟分析和曝光实验，提出了一种新型的接近式衍射缩小曝光方法，适用于紫外和Ｘ射线的接近式曝光。利用此方法，采用间隙在一定范围内可调的通用接近式曝光机，可在接近式曝光技术条件下，实现缩小曝光，可使实现亚半微米线宽图形的曝光和使其掩模版制作更为容易；并且具有等量缩小和焦深大的特点。 A near-type diffraction-reduced exposure method is proposed for near-field UV and X-ray exposure by computer simulation and exposure experiments of near-field diffraction after light passing through a reticle in proximity lithography. Using this method, a general-purpose proximity exposure machine with a gap adjustable within a certain range can achieve reduced exposure under the conditions of the proximity exposure technology, enabling the exposure of a half-micron linewidth pattern and making it reticle As easy; and has the same amount of zoom and focus characteristics.