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采用光刻技术、刻蚀技术和等离子体增强化学气相沉积(PECVD)技术,在线阵掩模微结构表面沉积了SiO2和Si3N4薄膜,研究了线阵掩模的宽度和厚度,以及薄膜的厚度和沉积速率对SiO2和Si3N4薄膜复形性的影响,制备得到了具有良好微结构形貌的微结构滤光片阵列。结果表明,薄膜沉积速率越大,薄膜的复形性越好;掩模厚度和薄膜沉积厚度的增加会导致薄膜的复形性变差;SiO2薄膜的复形性优于Si3N4薄膜的。
SiO2 and Si3N4 thin films were deposited on the surface of a linear array mask by photolithography, etching and PECVD. The width and thickness of the array mask and the thickness and The effect of deposition rate on the complexities of SiO2 and Si3N4 thin films was investigated. The microstructure filter arrays with good microstructure morphology were prepared. The results show that the larger the film deposition rate is, the better the complexity of the film. The increase of the thickness of the mask and the increase of the film thickness will result in the poor film formability. The film of the SiO2 film is better than the Si3N4 film.