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本文介绍了氟油(掺氧)等离子蚀刻多晶硅、氮化硅的实验装置及工艺参数;讨论了高频功率、电极形状、源瓶结构、蚀刻过程产生淀积物的处理以及系统气密性对蚀刻质量的影响.同时,从自由基理论出发,提出了氟油(掺氧)等离子蚀刻多晶硅、氮化硅的机理,并应用此机理对功率、氟油流量、氟油和氧气的比例与蚀刻速度的关系进行了理论解释.
In this paper, experimental equipment and process parameters for plasma etching of polycrystalline silicon and silicon nitride with fluorine oil (oxygen-doped) are introduced. The treatment of deposit with high frequency power, electrode shape, source bottle structure, etching process and gas-tightness of the system Etc .. At the same time, based on the free radical theory, the mechanism of plasma etching of polycrystalline silicon and silicon nitride with fluorine oil (oxygen-doped) was proposed and the relationship between power, fluorine oil flow, ratio of fluorine oil and oxygen and etching The relationship between the speed of a theoretical explanation.