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从屏障装置的位场特征出发,提出了一种编绘测深拟断面的新方法,并通过实例说明,用该方法绘制的测深拟断面,与实际地电断面非常接近。
Based on the field characteristics of the barrier device, a new method for compiling the simulative deep section is proposed. The example shows that the simulative deep section drawn by this method is very close to the actual electric section.