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1 引言 单管单元N沟MOS RAM是最先步入超大规模集成领域的半导体器件,它作为计算机的主存贮器,正在取代以往的磁心存贮器,这是因为MOS RAM具有高集成密度、高速度、高可靠性、低功耗、低成本等优点。与此同时,MOS RAM的价格在国际市场上越来越低,这亦是不可忽视的经济原因。随着需要量的不断增加,在保证提高成品率的同时,尽量减少芯片尺寸,增加单位面积的位数,也就是研制生产低价格大容量的MOS RAM已成为现今VLSI的主要课题之一。
1 Introduction Single-cell N-channel MOS RAM is the first semiconductor device to enter the field of very large-scale integration. As a main memory of a computer, it is replacing the previous core memory. This is because MOS RAM has a high integration density, High speed, high reliability, low power consumption, low cost and so on. At the same time, MOS RAM prices are getting lower and lower in the international market, which is also an economic reason that can not be ignored. As the demand continues to increase, minimizing chip size and increasing the number of bits per unit area while ensuring increased yield, that is, developing and manufacturing low-cost and large-capacity MOS RAMs, has become one of the major topics in VLSI today.